17 results
Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 560-561
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- August 2014
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Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene
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- MRS Online Proceedings Library Archive / Volume 1714 / 2014
- Published online by Cambridge University Press:
- 03 September 2014, mrss14-1714-ddd05-07
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- 2014
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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 27 November 2012, pp. 104-112
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- 14 January 2013
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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
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- 24 July 2012, pp. 129-135
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- 14 January 2013
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Silicon Nanowires Obtained by Low Temperature Plasma-Based Chemical Vapor Deposition.
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- MRS Online Proceedings Library Archive / Volume 1408 / 2012
- Published online by Cambridge University Press:
- 18 May 2012, mrsf11-1408-bb20-11
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- 2012
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Single Shockley Faults Evolution Under UV Optical Pumping
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- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-06
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- 2010
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Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
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- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-04
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- 2010
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Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-07
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- 2010
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Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
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- 17 March 2011, C5.5
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- 2004
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Indium in silicon: interactions with native defects and with C impurities
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- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C6.3
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- 2004
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Role of C and Ge in the electrical activation of In implanted in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C8.7
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- 2004
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Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si
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- MRS Online Proceedings Library Archive / Volume 765 / 2003
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- 01 February 2011, D7.1
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- 2003
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Indium in silicon: a study on diffusion and electrical activation.
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- MRS Online Proceedings Library Archive / Volume 765 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, D6.13
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- 2003
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Monte Carlo Analysis of the Evolution from Point to Extended Interstitial Type Defects in Crystalline Silicon
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- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B11.5
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- 2000
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Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation
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- MRS Online Proceedings Library Archive / Volume 568 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 43
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- 1999
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The Role of Cluster Size and Topology on the Ripening of Defect Aggregates in Crystalline Si
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- MRS Online Proceedings Library Archive / Volume 538 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 241
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- 1998
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Point-Defect Migration in Crystalline Si: Impurity Content, Surface and Stress Effects
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- MRS Online Proceedings Library Archive / Volume 532 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 93
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- 1998
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